| PART |
Description |
Maker |
| SA7025DK SA7025 |
Low-voltage 1GHz fractional-N synthesizer
|
PHILIPS[Philips Semiconductors]
|
| FSAV430MTCX FSAV430QSCX |
Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switch
|
Fairchild Semiconductor
|
| FSAV430MTCX11 FSAV430QSCX11 FSAV43011 |
Low Voltage 1.1GHz, 4-Channel, 2:1 Video Switch
|
Fairchild Semiconductor
|
| SA8016 |
2.5GHz low voltage fractional-N
|
Philips
|
| SA8016WC SA8016 SA8016DH |
2.5GHz low voltage fractional-N synthesizer
|
PHILIPS[Philips Semiconductors]
|
| SA7016DH SA7016 |
1.3GHz low voltage fractional-N synthesizer
|
PHILIPS[Philips Semiconductors]
|
| SA7026 SA7026DH |
1.3GHz low voltage fractional-N dual frequency synthesizer
|
NXP Semiconductors
|
| SA611DK SA611 SA611_3 |
1 GHz low voltage LNA and mixer
From old datasheet system
1GHz low voltage LNA and mixer
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF2040 Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TSH691 TSH691ID |
LOW COST 40MHz - 1GHz AMPLIFIER
|
ST Microelectronics
STMicroelectronics
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
